华南师范大学信息光电子科技学院光子信息技术实验室，广州 510631
介绍了在高于253K的温度下，实现红外单光子探测的实验．选用拉通电压较高的雪崩光电二极管(APD)，设计制作了非线性限流技术保护高温工作的APD，利用半导体热电制冷器，在256．8K的温度下，实现了1550nm波段的单光子探测实验．单光子探测的暗记数率为3．13×10－5ns，在220kHz／s的单光子脉冲速率下，探测效率为2．08%．
应用光学 红外单光子探测 暗计数 热电制冷 Applied optics Infrared single photon detectors Dark counting Peltier-cooler
Author Affiliations
Abstract
1 School for Information and Opto-Electronic Science and Engineering, South China Normal University, Guangzhou 510631
2 Department of Applied Physics, South China University of Technology, Guangzhou,510641
3 College of Applied Physics, Guangdong University of Technolody, Guangzhou 510090
The passively quenched operation of avalanche photodiode (APD) has been used to characterizing InGaAs/InP APD including punch through voltage, avalanche voltage and break down voltage that are all important in the design of APD for single photon detection. The punch through voltage at certain doping level can be related to the thickness of the InP multiplication layer and the thickness of the un-intentionally doped n-type InP layer can be adjusted in according to the experimental data. The analysis indicates that the punch through voltage should be close to the breakdown voltage that can be realized by adjusting the thickness of InP multiplication layer.
040.3060 Infrared 040.3780 Low light level 040.5570 Quantum detectors 160.1890 Detector materials 230.5160 Photodetectors 270.5570 Quantum detectors Chinese Optics Letters
2005, 3(0s): 31
